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Samsung Electronics Begins Industry’s First Mass Production of 9th-Gen V-NAND
April 29, 2024 | Samsung ElectronicsEstimated reading time: 1 minute
Samsung Electronics, the world leader in advanced memory technology, today announced that it has begun mass production for its one-terabit (Tb) triple-level cell (TLC) 9th-generation vertical NAND (V-NAND), solidifying its leadership in the NAND flash market.
“We are excited to deliver the industry’s first 9th-gen V-NAND which will bring future applications leaps forward. In order to address the evolving needs for NAND flash solutions, Samsung has pushed the boundaries in cell architecture and operational scheme for our next-generation product,” said SungHoi Hur, Head of Flash Product & Technology of the Memory Business at Samsung Electronics. “Through our latest V-NAND, Samsung will continue to set the trend for the high-performance, high-density solid-state drive (SSD) market that meets the needs for the coming AI generation.”
With the industry’s smallest cell size and thinnest mold, Samsung improved the bit density of the 9th-generation V-NAND by about 50% compared to the 8th-generation V-NAND. New innovations such as cell interference avoidance and cell life extension have been applied to enhance product quality and reliability, while eliminating dummy channel holes has significantly reduced the planar area of the memory cells.
In addition, Samsung’s advanced “channel hole etching” technology showcases the company’s leadership in process capabilities. This technology creates electron pathways by stacking mold layers and maximizes fabrication productivity as it enables simultaneous drilling of the industry’s highest cell layer count in a double-stack structure. As the number of cell layers increase, the ability to pierce through higher cell numbers becomes essential, demanding more sophisticated etching techniques.
The 9th-generation V-NAND is equipped with the next-generation NAND flash interface, “Toggle 5.1,” which supports increased data input/output speeds by 33% to up to 3.2 gigabits-per-second (Gbps). Along with this new interface, Samsung plans to solidify its position within the high-performance SSD market by expanding support for PCIe 5.0.
Power consumption has also been improved by 10% with advancements in low-power design, compared to the previous generation. As reducing energy usage and carbon emissions becomes vital for customers, Samsung’s 9th-generation V-NAND is expected to be an optimal solution for future applications.
Samsung has started mass production for the 1Tb TLC 9th-generation V-NAND this month, followed by the quad-level cell (QLC) model in the second half of this year.
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05/07/2024 | TrendForceTrendForce’s latest forecasts reveal contract prices for DRAM in the second quarter are expected to increase by 13–18%, while NAND Flash contract prices have been adjusted to a 15–20% Only eMMC/UFS will be seeing a smaller price increase of about 10%.
AI Demand Drives Rapid Growth in QLC Enterprise SSD Shipments for 2024
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03/29/2024 | TrendForceTrendForce projects a strong 13–18% increase in Q2 NAND Flash contract prices, with enterprise SSDs expected to rise highest. Despite Kioxia and WDC boosting their production capacity utilization rates from Q1 this year, other suppliers have kept their production strategies conservative.
Kioxia, WD Elevate Capacity Utilization, Pushing NAND Flash Supply Growth to 10.9%
03/19/2024 | TrendForceTrendForce reports that anticipation of NAND Flash price hikes into Q2 has motivated certain suppliers to minimize losses and lower costs in hopes of returning to profitability this year.
NAND Flash Industry Revenue Grows 24.5% in Q4 2023, Expected to Increase Another 20% in Q1,
03/06/2024 | TrendForceTrendForce reports a substantial 24.5% QoQ increase in NAND Flash industry revenue, hitting US$11.49 billion in 4Q23. This surge is attributed to a stabilization in end-demand spurred by year-end promotions, along with an expansion in component market orders driven by price chasing, leading to robust bit shipments compared to the same period last year.